Interband phonon assisted tunneling in InAs/GaSb heterostructures
نویسندگان
چکیده
The rate of LO-phonon assisted interband transitions in an InAs/GaSb double quantum well heterostructure is compared with the elastic interband tunneling rate through the heterostructure ‘leaky window’. We show that the phonon-assisted process can dominate over the elastic tunneling if the initial and final electron states anticross and the anticrossing gap is smaller than the LO-phonon energy. r 2002 Elsevier Science B.V. All rights reserved.
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